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Samsung Electronics Developed Amorphous Oxide TFT New Technology. 2008/12/16 By Seo, Han Samsung Electronics succeeded in developing Amorphous Oxide TFT new technology, which can be used widely to next generation display semiconductor devices. Amorphous Oxide TFT technology is the next generation technology that can replace Amorphous Silicon TFT, which is being mass produced. The technology can mass produce high performing devices at lower manufacturing cost, and can be applied widely to LCD, AM OLED, thin film solar cell, LED and sensor. With development, Samsung Electronics secures future technology. The maker will announce the technology at the IEDM 2008, which is scheduled for December 15 local time in San Francisco. The technology changed existing oxide TFT’s single channel structure into channel structure to realize 130㎠/V•sec in electron movement, three times higher than now. If electron movement is improved, it can improve the screen quality of display semiconductor device and handling capacity. As the definition of flat display went beyond full HD level to develop into UD level, screen driving speed offering due to massive data handling is possible. And ‘Threshold voltage’ moving TFT can be controlled to be linked to various semiconductor sensors. In particular, Amorphous Oxide TFT technology can utilize current LCD panel mass production process as it is and at the same time can peripheral circuits to panel, lowering manufacturing cost greatly. The maker expected that this technology will be widely applied to AM OLED, flexible display, transparent display, solar cell, LED and sensors as well as LCD panel. Kim, Yung-hwan, senior managing director said, “In mid and long term, we will be able to expand application to semiconductor peripheral circuits in addition to future display to become key technology to semiconductor devices in the future.” Meanwhile, Samsung SDI succeeded in developing the best definition AM OLED panel, which applied Amorphous Oxide TFT technology, for the first time in the world in May.